Macroscale Transformation Optics Enabled by Photoelectrochemical Etching.
David S Barth, Christopher Gladden, Alessandro Salandrino, Kevin O'Brien, Ziliang Ye, Michael Mrejen, Yuan Wang, Xiang Zhang
Author Information
David S Barth: NSF Nano-scale Science and Engineering Center (NSEC), University of California Berkeley, Berkeley, CA, 94720, USA.
Christopher Gladden: NSF Nano-scale Science and Engineering Center (NSEC), University of California Berkeley, Berkeley, CA, 94720, USA.
Alessandro Salandrino: NSF Nano-scale Science and Engineering Center (NSEC), University of California Berkeley, Berkeley, CA, 94720, USA.
Kevin O'Brien: NSF Nano-scale Science and Engineering Center (NSEC), University of California Berkeley, Berkeley, CA, 94720, USA.
Ziliang Ye: NSF Nano-scale Science and Engineering Center (NSEC), University of California Berkeley, Berkeley, CA, 94720, USA.
Michael Mrejen: NSF Nano-scale Science and Engineering Center (NSEC), University of California Berkeley, Berkeley, CA, 94720, USA.
Yuan Wang: NSF Nano-scale Science and Engineering Center (NSEC), University of California Berkeley, Berkeley, CA, 94720, USA.
Xiang Zhang: NSF Nano-scale Science and Engineering Center (NSEC), University of California Berkeley, Berkeley, CA, 94720, USA.
Photoelectrochemical etching of silicon can be used to form lateral refractive index gradients for transformation optical devices. This technique allows the fabrication of macroscale devices with large refractive index gradients. Patterned porous layers can also be lifted from the substrate and transferred to other materials, creating more possibilities for novel devices.
