Lei Tong: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China. ORCID
Zhuiri Peng: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China. ORCID
Runfeng Lin: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China. ORCID
Zheng Li: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China. ORCID
Yilun Wang: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China. ORCID
Xinyu Huang: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China. ORCID
Kan-Hao Xue: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China. ORCID
Hangyu Xu: State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China. ORCID
Feng Liu: School of Power and Mechanical Engineering, Wuhan University, Wuhan, Hubei 430072, China. ORCID
Hui Xia: State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China.
Peng Wang: State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China. ORCID
Mingsheng Xu: School of Micro-Nano Electronics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.
Wei Xiong: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China. ORCID
Weida Hu: State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China. ORCID
Jianbin Xu: Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, China. ORCID
Xinliang Zhang: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China. ORCID
Lei Ye: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China. ORCID
Xiangshui Miao: Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China. ORCID
In neuromorphic hardware, peripheral circuits and memories based on heterogeneous devices are generally physically separated. Thus, exploration of homogeneous devices for these components is key for improving module integration and resistance matching. Inspired by the ferroelectric proximity effect on two-dimensional (2D) materials, we present a tungsten diselenide–on–lithium niobate cascaded architecture as a basic device that functions as a nonlinear transistor, assisting the design of operational amplifiers for analog signal processing (ASP). This device also functions as a nonvolatile memory cell, achieving memory operating (MO) functionality. On the basis of this homogeneous architecture, we also investigated an ASP-MO integrated system for binary classification and the design of ternary content-addressable memory for potential use in neuromorphic hardware.
