Jie Lao: Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
Mengge Yan: Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
Bobo Tian: Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China. ORCID
Chunli Jiang: Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
Chunhua Luo: Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
Zhuozhuang Xie: Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
Qiuxiang Zhu: Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
Zhiqiang Bao: Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
Ni Zhong: Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
Xiaodong Tang: Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
Linfeng Sun: Centre for Quantum Physics Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics Beijing Institute of Technology, Beijing, 100081, China.
Guangjian Wu: Institute of Optoelectronics, Frontier Institute of Chip and System, Fudan University, 220 Handan Road, Shanghai, 200433, China.
Jianlu Wang: Institute of Optoelectronics, Frontier Institute of Chip and System, Fudan University, 220 Handan Road, Shanghai, 200433, China.
Hui Peng: Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
Junhao Chu: Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
Chungang Duan: Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China.
A neuromorphic visual system integrating optoelectronic synapses to perform the in-sensor computing is triggering a revolution due to the reduction of latency and energy consumption. Here it is demonstrated that the dwell time of photon-generated carriers in the space-charge region can be effectively extended by embedding a potential well on the shoulder of Schottky energy barrier. It permits the nonlinear interaction of photocurrents stimulated by spatiotemporal optical signals, which is necessary for in-sensor reservoir computing (RC). The machine vision with the sensor reservoir constituted by designed self-powered Au/P(VDF-TrFE)/Cs AgBiBr /ITO devices is competent for both static and dynamic vision tasks. It shows an accuracy of 99.97% for face classification and 100% for dynamic vehicle flow recognition. The in-sensor RC system takes advantage of near-zero energy consumption in the reservoir, resulting in decades-time lower training costs than a conventional neural network. This work paves the way for ultralow-power machine vision using photonic devices.
