Pengfei Ma: College of Science, Jilin Institute of Chemical Technology Jilin 132022 P. R. China xujiaying@jlict.edu.cn.
Jiaying Xu: College of Science, Jilin Institute of Chemical Technology Jilin 132022 P. R. China xujiaying@jlict.edu.cn. ORCID
Chen Wang: State Key Laboratory on Integrated Optoelectronics and College of Electronic Science & Engineering, Jilin University Changchun 130012 P. R. China.
Changhao Wang: College of Science, Jilin Institute of Chemical Technology Jilin 132022 P. R. China xujiaying@jlict.edu.cn.
Fanxu Meng: Center of Analysis and Measurement, Jilin Institute of Chemical Technology Jilin 132022 P. R. China mfxoped2019@126.com.
Yupeng Xie: College of Science, Jilin Institute of Chemical Technology Jilin 132022 P. R. China xujiaying@jlict.edu.cn.
Shanpeng Wen: State Key Laboratory on Integrated Optoelectronics and College of Electronic Science & Engineering, Jilin University Changchun 130012 P. R. China. ORCID
Molybdenum oxide (MoO ) is widely used as a buffer layer in optoelectronic devices to improve the charge extraction efficiency. The oxidation state of MoO plays an important role in determining its electrical properties. However, there are few studies on the oxidation state to further guide the optimization of the MoO buffer layer. In this work, inverted-structured polymer solar cells (PSCs) with a MoO buffer layer were fabricated. Post-air annealing was used to control the cation valence state in MoO . X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), atomic force microscopy (AFM) and transient photocurrent (TPC) were employed to study the valence state, energy level, morphology of the MoO layers and the photovoltaic property and charge transfer efficiency of the devices. It was found that the oxidation state was effectively improved by the post-annealing process. As a result, the work function of MoO was raised and the hole mobility was improved. The open-circuit voltages and the efficiencies of PTB7-Th:PCBM based PSCs were enhanced from 0.77 V and 8.66% to 0.81 V and 10.01%, respectively. The results show that high oxidation state MoO provides optimized energy level alignment, reduced defects and better charge transfer efficiency, which is more in line with the requirement of buffer layer materials for optoelectronic applications.
