Shimpei Nishiyama: Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo, 152-8552, Japan.
Kimihiko Kato: Device Technology Research Institute (D-Tech), National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba, Ibaraki, 305-8568, Japan.
Mizuki Kobayashi: Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo, 152-8552, Japan.
Raisei Mizokuchi: Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo, 152-8552, Japan.
Takahiro Mori: Device Technology Research Institute (D-Tech), National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba, Ibaraki, 305-8568, Japan.
Tetsuo Kodera: Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo, 152-8552, Japan. kodera.t.ac@m.titech.ac.jp.
We propose and define a reservoir offset voltage as a voltage commonly applied to both reservoirs of a quantum dot and study the functions in p-channel Si quantum dots. By the reservoir offset voltage, the electrochemical potential of the quantum dot can be modulated. In addition, when quantum dots in different channels are capacitively coupled, the reservoir offset voltage of one of the QDs can work as a gate voltage for the others. Our results show that the technique will lead to reduction of the number of gate electrodes, which is advantageous for future qubit integration.
References
Sci Adv. 2016 Aug 12;2(8):e1600694
[PMID: 27536725]
