Oxygen scavenging of HfZrO-based capacitors for improving ferroelectric properties.
Bong Ho Kim, Song-Hyeon Kuk, Seong Kwang Kim, Joon Pyo Kim, Dae-Myeong Geum, Seung-Hyub Baek, Sang Hyeon Kim
Author Information
Bong Ho Kim: School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) 34141 Daejeon Republic of Korea shkim.ee@kaist.ac.kr.
Song-Hyeon Kuk: School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) 34141 Daejeon Republic of Korea shkim.ee@kaist.ac.kr.
Seong Kwang Kim: School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) 34141 Daejeon Republic of Korea shkim.ee@kaist.ac.kr.
Joon Pyo Kim: School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) 34141 Daejeon Republic of Korea shkim.ee@kaist.ac.kr.
Dae-Myeong Geum: School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) 34141 Daejeon Republic of Korea shkim.ee@kaist.ac.kr.
Seung-Hyub Baek: Electronic Materials Research Center, Korea Institute of Science and Technology (KIST) 02792 Seoul Republic of Korea. ORCID
Sang Hyeon Kim: School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) 34141 Daejeon Republic of Korea shkim.ee@kaist.ac.kr. ORCID
HfO-based ferroelectric (FE) materials have emerged as a promising material for non-volatile memory applications because of remanent polarization, scalability of thickness below 10 nm, and compatibility with complementary metal-oxide-semiconductor technology. However, in the metal/FE/insulator/semiconductor, it is difficult to improve switching voltage ( ), endurance, and retention properties due to the interfacial layer (IL), which inevitably grows during the fabrication. Here, we proposed and demonstrated Oxygen scavenging to reduce the IL thickness in an HfZrO -based capacitor and the thinner IL was confirmed by cross-sectional transmission electron microscopy. of a capacitor with scavenging decreased by 18% and the same could be obtained at a lower voltage than a capacitor without scavenging. In addition, excellent endurance properties up to 10 cycles were achieved. We believe Oxygen scavenging has great potential for future HfZrO -based memory device applications.
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