Shuaibo Zhai: School of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.
Jiaqi Gong: School of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.
Yifei Feng: School of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.
Zhongbao Que: School of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.
Weiwei Mao: School of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.
Xuemin He: School of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.
Yannan Xie: School of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.
Xing'ao Li: School of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.
Liang Chu: Institute of Carbon Neutrality and New Energy, School of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China.
Memristors are promising information storage devices for commercial applications because of their long endurance and low power consumption. Particularly, perovskite memristors have revealed excellent resistive switching (RS) properties owing to the fast ion migration and solution fabrication process. Here, an n-i-p type double perovskite memristor with "ITO/SnO/CsAgBiBr/NiO/Ag" architecture was developed and demonstrated to reveal three resistance states because of the p-n junction electric field coupled with ion migration. The devices exhibited reliable filamentary with an on/off ratio exceeding 50. The RS characteristics remained unchanged after 1000 s read and 300 switching cycles. The synaptic functions were examined through long-term depression and potentiation measurements. Significantly, the device still worked after one year to reveal long-term stability because of the all-inorganic layers. This work indicates a novel idea for designing a multistate memristor by utilizing the p-n junction unidirectional conductivity during the forward and reverse scanning.
