Bobo Tian: Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China. ORCID
Zhuozhuang Xie: Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.
Luqiu Chen: Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.
Shenglan Hao: Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.
Yifei Liu: Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.
Guangdi Feng: Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.
Xuefeng Liu: Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.
Hongbo Liu: School of Materials Science and Engineering Shanghai University of Engineering Science Shanghai China.
Jing Yang: Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.
Yuanyuan Zhang: Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.
Wei Bai: Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.
Tie Lin: State Key Laboratory of Infrared Physics, Chinese Academy of Sciences Shanghai Institute of Technical Physics Shanghai China.
Hong Shen: State Key Laboratory of Infrared Physics, Chinese Academy of Sciences Shanghai Institute of Technical Physics Shanghai China.
Xiangjian Meng: State Key Laboratory of Infrared Physics, Chinese Academy of Sciences Shanghai Institute of Technical Physics Shanghai China.
Ni Zhong: Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.
Hui Peng: Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China. ORCID
Fangyu Yue: Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.
Xiaodong Tang: Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.
Jianlu Wang: Frontier Institute of Chip and System Fudan University Shanghai China.
Qiuxiang Zhu: Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.
Yachin Ivry: Department of Materials Science and Engineering Solid-State Institute Technion-Israel Institute of Technology Haifa Israel.
Brahim Dkhil: CentraleSup��lec, CNRS-UMR8580, Laboratoire SPMS Universit�� Paris-Saclay Gif-sur-Yvette France.
Junhao Chu: Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.
Chungang Duan: Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics East China Normal University Shanghai China.
Analog storage through synaptic weights using conductance in resistive neuromorphic systems and devices inevitably generates harmful heat dissipation. This thermal issue not only limits the energy efficiency but also hampers the very-large-scale and highly complicated hardware integration as in the human brain. Here we demonstrate that the synaptic weights can be simulated by reconfigurable non-volatile capacitances of a ferroelectric-based memcapacitor with ultralow-power consumption. The as-designed metal/ferroelectric/metal/insulator/semiconductor memcapacitor shows distinct 3-bit capacitance states controlled by the ferroelectric domain dynamics. These robust memcapacitive states exhibit uniform maintenance of more than 10 s and well endurance of 10 cycles. In a wired memcapacitor crossbar network hardware, analog vector-matrix multiplication is successfully implemented to classify 9-pixel images by collecting the sum of displacement currents ( = �� d/d) in each column, which intrinsically consumes zero energy in memcapacitors themselves. Our work sheds light on an ultralow-power neural hardware based on ferroelectric memcapacitors.
