IGZO/SnOx-based dynamic memristor with fading memory effect for reservoir computing.

Subaek Lee, Yongjin Park, Sungyeop Jung, Sungjun Kim
Author Information
  1. Subaek Lee: Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.
  2. Yongjin Park: Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.
  3. Sungyeop Jung: Semiconductor Devices and Circuits Laboratory, Advanced Institute of Convergence Technology (AICT), Seoul National University, 145, Gwanggyo-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16229, Republic of Korea. ORCID
  4. Sungjun Kim: Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea. ORCID

Abstract

We investigate a synaptic device with short-term memory characteristics using IGZO/SnOx as the switching layer. The thickness and components of each layer are analyzed by using x-ray photoelectron spectroscopy and transmission electron microscopy. The memristor exhibits analog resistive switching and a volatile feature with current decay over time. Moreover, through ten cycles of potentiation and depression, we demonstrate stable conductance modulation, leading to high-accuracy Modified National Institute of Standards and Technology pattern recognition. We effectively emulate the learning system of a biological synapse, including paired-pulse facilitation, spiking-amplitude-dependent plasticity, and spiking-rate-dependent plasticity (SRDP) by pulse trains. Ultimately, 4-bit reservoir computing divided into 16 states is incarnated using a pulse stream considering short-term memory plasticity and decay properties.

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