Weiqing Chen: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, China.
Shun Zhou: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, China.
Hongsen Cui: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, China.
Weiwei Meng: South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China. ORCID
Hongling Guan: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, China.
Guojun Zeng: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, China.
Yansong Ge: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, China.
Sengke Cheng: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, China.
Zixi Yu: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, China.
Dexin Pu: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, China.
Lishuai Huang: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, China.
Jin Zhou: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, China.
Guoyi Chen: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, China. ORCID
Guang Li: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, China.
Hongyi Fang: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, China.
Zhiqiu Yu: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, China.
Hai Zhou: International School of Microelectronics, Dongguan University of Technology, Dongguan, Guangdong, China. ORCID
Guojia Fang: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, China. ORCID
Weijun Ke: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, China. weijun.ke@whu.edu.cn. ORCID
Precise control over halide perovskite crystallization is pivotal for realizing efficient solar cells. Here, we introduce a strategy utilizing in-situ-formed oxide-based ABX-structured seeds to regulate perovskite crystallization and growth. Introducing potassium stannate into perovskite precursors triggers a spontaneous reaction with lead iodide, producing potassium iodide and lead stannate. Potassium iodide effectively passivates defects, while PbSnO (ABX-structured), exhibiting a 98% lattice match, acts as a template and seed. This approach facilitates pre-nucleation cluster formation, preferential grain orientation, and the elimination of intermediate-phase processes in perovskite films. Incorporating potassium stannate into both the perovskite precursors and the buried hole transport layers enables single-junction 1.25 eV-bandgap Sn-Pb perovskite solar cells to achieve a steady-state efficiency of 23.12% and enhanced stability. Furthermore, all-perovskite tandem devices yield efficiencies of 28.12% (two-terminal) and 28.81% (four-terminal). This versatile templating method also boosts the performance of 1.77 eV and 1.54 eV-bandgap cells, underscoring its broad applicability.
