AlScN/SiC-Based Metal-Ferroelectric-Semiconductor Capacitors Operating up to 1000 °C.
Yunfei He, David C Moore, Yubo Wang, Spencer Ware, Sizhe Ma, Dhiren K Pradhan, Zekun Hu, Xingyu Du, W Joshua Kennedy, Nicholas R Glavin, Roy H Olsson, Deep Jariwala
Author Information
Yunfei He: Department of Electrical and System Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.
David C Moore: Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, Ohio 45433, United States.
Yubo Wang: Department of Electrical and System Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.
Spencer Ware: Department of Electrical and System Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.
Sizhe Ma: Department of Electrical and System Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.
Dhiren K Pradhan: Department of Electrical and System Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.
Zekun Hu: Department of Electrical and System Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.
Xingyu Du: Department of Electrical and System Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.
W Joshua Kennedy: Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, Ohio 45433, United States. ORCID
Nicholas R Glavin: Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, Ohio 45433, United States.
Roy H Olsson: Department of Electrical and System Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.
Deep Jariwala: Department of Electrical and System Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States. ORCID
Ferroelectric (Fe) materials-based devices show great promise for nonvolatile memory applications, yet few demonstrate reliable operation at elevated temperatures. In this work, we demonstrate Ni/AlScN/4H-SiC metal-ferroelectric-semiconductor capacitors for high-temperature nonvolatile memory applications. Our 30 nm thick ferroelectric AlScN film grown on SiC exhibits stable and robust ferroelectric switching up to 1000 °C. The coercive field decreases linearly from -6.4/+11.9 MV cm at room temperature to -3.1/+7.8 MV cm at 800 °C, further reducing to -2.5 MV cm at 1000 °C. At 600 °C, the devices achieve remarkable reliability with ∼2000 endurance cycles and over at least 100 h of retention with negligible polarization loss. At 800 °C, the devices retain data for at least 10,000 s and exceed 400 write cycles. Our results further highlight the potential for ferroelectric AlScN thin films particularly when paired with SiC semiconductor substrates for high-temperature nonvolatile memory.
