Imaging of electronic device surface or sub-surface electromagnetic fields under operating conditions is important for device design and diagnosis. In this study, we proposed a method to characterize specific magnetic field properties of electromagnetic devices at micron-scale using a solid-state quantum sensor, namely diamond nitrogen-vacancy (NV) centers. By employing a wide-field magnetic field measurement technique based on NV centers, we rapidly obtain the first-order magnetic field distribution of anomalous regions. Furthermore, we approximate the second-order magnetic field (magnetic gradient tensor) using the differential gradient method. To visualize the electromagnetic anomalous regions boundary, we utilize the tensor invariants of the magnetic gradient tensor components, along with their nonlinear combinations. The identification error rate of the anomalous regions is within 12.5%. Additionally, the electromagnetic field of anomalous regions is simulated showing the measurement accuracy. Our study shows that the experimental results are very similar to the theoretical simulation of the electromagnetic field (error: 7%). This work is essential for advancing electromagnetic field characterization of electronic devices and the advancement of quantum magnetic sensor applications.
